Job Location: Shillong, Meghalaya
Applications are invited from motivated and eligible candidates for the position of Project Associate-I for the project entitled “Design and Development of highly sensitive Non-Conventional Ring Channel Shaped MOSFET based current mirror integrated pressure sensors (DST/TDT/DDP-36/2021)” under Technology Development Transfer (TDT) Division and Device Development Programme (DDP) Scheme, Department of Science and Technology (DST), Government of India in the Department of Electronics & Communication Engineering, National Institute of Technology (NIT) Meghalaya.
About the National Institute of Technology, Meghalaya

Vacancy Details
1. Project Associate-I
- Job Type: Research Jobs
- No. of Vacancies: 01
- Age Limit: 35 years.
- Eligibility: B.Tech./M.Tech. in Electronics Engineering with specialization in Electronics / VLSI / MEMS and related areas, with a minimum of 60% marks.
- Work Experience: Freshers may apply
- Salary: Rs. 25,000-31,000/- p.m.+HRA
Selection and Application Process
Candidates are required to send self-attested scanned copies of the certificates, the application form and send to pradeeprathore@nitm.ac.in as a single PDF file on or before 12th May 2022. The subject of the email should be “Application for the post of JRF in DST Project (DST/TDT/DDP-36/2021)”. The shortlisted candidates will be informed through email for interview by 16th May 2022. Physical/Skype/Google Meet-based Interview will be held tentatively on 18th May 2022 (tentatively). The exact time of the interview will be informed through email.
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About the National Institute of Technology, Meghalaya
