Job Location: Shillong, Meghalaya
Applications are invited from motivated and eligible candidates for the position of Project Associate-I for the project entitled “Design and Development of highly sensitive Non-Conventional Ring Channel Shaped MOSFET based current mirror integrated pressure sensors (DST/TDT/DDP-36/2021)” under Technology Development Transfer (TDT) Division and Device Development Programme (DDP) Scheme, Department of Science and Technology (DST), Government of India in the Department of Electronics & Communication Engineering, National Institute of Technology (NIT) Meghalaya. The staff selected in this project will get a chance to fabricate the devices at Semiconductor Laboratory Chandigarh.
About the National Institute of Technology, Meghalaya

Vacancy Details
1. Project Associate-I
- Job Type: Research Jobs
- No. of Vacancies: 01
- Age Limit: 35 years.
- Eligibility: B.Tech./M.Tech. in Electronics Engineering with specialization in Electronics / VLSI / MEMS and related areas, with a minimum of 60% marks.
- Work Experience: Freshers may apply
- Salary: Rs. 31,000/- p.m.+HRA
Selection and Application Process
Append your self-attested scanned copies of the certificates, and the application form and send to pradeeprathore@nitm.ac.in as a single PDF file on or before 11th July 2022. The applications received after the mentioned date will not be considered further. The subject of the email should be “Application for the post of JRF in DST Project (DST/TDT/DDP-36/2021)”.
The shortlisted candidates will be informed through email for an interview by 13th July 2022. Physical/Skype/Google Meet-based Interview will be held tentatively on 15th July 2022. The exact time of the interview will be informed through email.
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About the National Institute of Technology, Meghalaya
